Abstract
Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A3B5: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of >230 mJ/cm2, the hole concentration in GaAs: Mn layers increases to 3 × 1020 cm–3. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.
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