Abstract
Low-energy bombardment by argon and oxygen ions has been used in the deposition of thin dielectric films of ZrO2. The film packing density has been improved from 0.83 to unity with a corresponding increase in the refractive index from 1.84 to 2.19. The highest stable refractive index measured was 2.23 for oxygen ion-assisted deposition of ZrO2 on a substrate heated to 300 °C. Ion bombardment during condensation of evaporated ZrO2 on a room temperature substrate results in crystallization into the cubic phase which is consistent with previous studies of ion impact crystallization by thermal-spike processes. At elevated substrate temperatures the monoclinic phase is also present.
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