Modern methods for thin film and surface analyses

Abstract

The excitation and emission phenomena and the physical properties used for the identification of elements in modern methods of thin film and surface analysis (laser optical emission spectroscopy, X-ray photoelectron spectroscopy, Auger electron spectroscopy (AES), electron microprobe analysis, scanning and transmission electron microscopy (SEM, TEM), low and high energy ion scattering spectroscopy and secondary ion mass spectrometry (SIMS) are briefly discussed. Recent developments in and the state of the art of depth profiling (using both destructive and non-destructive methods) and microspot analysis are reviewed in depth. The parameters which determine lateral resolution in the different beam techniques (the beam diameter, the sample thickness and density, the interaction volume and the information volume) are discussed. The minimum obtainable beam diameters for the various techniques are discussed with respect to the compromise between the total current and the detection limit. The minimum detectable concentrations in SIMS and AES depend on the beam diameter in different ways; the consequences of this behaviour for microspot analysis are discussed. An example combining interface analysis and microstructure determination in MnZn ferrites by using AES and analytical TEM demonstrates the power of a multi-method analytical approach. TEM with energy or wavelength dispersive X-ray analysis can push the lateral resolution into the hundred ångström region.