Abstract
The standard circuit for inverters for electrical drive and energy applications is the voltage source inverter. The preferred semiconductor from the kW up to the MW range is the IGBT. For high power inverters, high voltage IGBT modules are used. High voltage IGBTs have a limited turn-off capability. The use of large size or paralleled IGBTs leads to large inductive voltage drops in the commutation circuits. In this paper, a simple model for the turn-off of high voltage IGBTs with long carrier lifetime is derived from the device physics. The turn-off stress for the IGBT and the influence of the gate drive on it are analyzed and the characteristic behavior of IGBTs with field stop layers is explained.
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