Abstract
AbstractAn explicit finite difference time domain method is proposed for modelling of composite right‐/left‐handed active multiconductor transmission lines in time domain. For the first time, the concept of active composite right‐/left‐handed transmission lines is considered in field effect transistor (FET) modelling. In this work, based on the distributed model, the FET is considered as an active multiconductor transmission line in the mm/wave frequency range. In this modelling technique, the FET is divided into 2 different parts, the active part, represents the intrinsic equivalent circuit of the transistor, while the passive part symbolizes the device electrodes. The finite‐difference time‐domain scheme is proposed for the analysis, and the results of this technique are compared with the ones obtained from simulations. Furthermore, the stability issue is investigated and the sufficient condition for stability is derived.
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