Abstract
We present an analysis of carrier dynamics in a multi-quantum well (MQW) semiconductor optical amplifier in the saturation and recovery regimes. The model is based on an analytical solution of rate equations for carriers in the bulk and bound states of MQWs. The analysis shows that in the saturation regime, the carrier dynamics in the well, as well as material gain, considerably depends on the ratio of the differential gain to the nonlinear gain suppression factor, while the transport effects and capture and escape of carriers affect it slightly. The carrier dynamics in the bulk is dependent more on the transport effects and on the capture and escape of carriers. In the recovery regime, the carrier dynamics depends strongly on the carrier lifetime and bias current.
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