Abstract
Numerical simulation of the redistribution of boron atoms in argon-implanted silicon wafers has been performed. The virgin wafers were uniformly doped with boron. The redistribution of boron atoms has been observed for high dose argon implantation (dosage ) after annealing at temperatures of and , while it was completely absent in the low-dose implantation. We suggest that the excess self-interstitials generated after the recrystallization of the amorphized layer are responsible for the redistribution. The interaction of these excess self-interstitials with boron atoms is through the kickout mechanism by which a large number of mobile boron species at interstitial sites are produced. The experimental post-annealed boron profiles for the high-dose implantation were numerically simulated both for and annealing.
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