Abstract
An improved physical model for the collector current in the SOI submicrometre gate-controlled hybrid transistor (GCHT) is presented in this paper, with the bias-dependent dynamic threshold voltage of the GCHT redefined and evaluated, considering the impact of carrier injection on the inversion degree of the surface in the base. Many physical effects are taken into account in this model, including channel length modulation effect, mobility degradation effect, as well as high injection effect, source/drain series resistance and body-contact resistance effect, which may result in additional gate-body bias. The model is verified by comparison between calculated results, PISCES simulated results and experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
