Abstract
The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200 μm 2) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2 GHz, still using a 1 μm gate length optical lithography.
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