Abstract
A sufficiently high temperature gradient in the direction perpendicular to the surface of a semiconductor wafer forces impurities occurring in the subsurface region to emerge at the surface. The process of impurity thermodiffusion was numerically calculated for the initial impurity distributions in the form of a Gaussian source or a uniform layer. The curves illustrating the kinetics of impurity accumulation at the surface are obtained and the stationary solutions are found, which coincide in the two cases provided that the initial impurity content was the same.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
