Abstract

Optical properties of 6H-SiC in the range from 1 eV to 30 eV for the component perpendicular to the c axis are modeled using the modified Adachi model. Model parameters are determined by acceptance-probability-controlled simulated annealing. The main distinguishing feature of the model employed here is the use of variable broadening instead of the conventional Lorentzian one. The type of broadening is determined by the ratio of two adjustable model parameters, so that greater flexibility of the model is achieved. In such a way, excellent agreement with experimental data is obtained, giving relative rms error of 3.5% for the real part of the index of refraction and 5.2% for the imaginary part.

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