Abstract
The 3D Monte Carlo transport code GEANT 4 was used to simulate the Dark Current Non Uniformity of image sensors. The method includes three different physical processes: the Coulombic scattering, the nuclear elastic interaction and the nuclear inelastic interaction. The dark current distribution is directly deduced from the damage distribution according to the Universal Damage Factor of Srour (UDF). Comparisons have been performed with experimental measurements made on two CMOS Image Sensors (JADE from E2 V and HAS2 from ON SEMICONDUCTOR) irradiated with protons of various energies ranging from 30 MeV to 185 MeV. Despite the simplifying assumptions of the model, the calculations are demonstrated to be in quite good agreement with experimental data.
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