Abstract
The temperature and light intensity dependences of persistent photoconductivity (PPC) in Cu(In,Ga)Se2 thin films have not been fully understood so far. We show by means of the numerical simulations that experimental characteristics of PPC can be explained by the combination of two factors: a higher than previously assumed energy barrier for the electron capture process (at least 0.26 eV), and stretched-exponential character of transients. Our findings are compatible with the hypothesis linking PPC in Cu(In,Ga)Se2 with a defect exhibiting the large lattice relaxation, like the Se-Cu divacancy complex (VSe-VCu).
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