Modeling of magnetic field sensitivity of bipolar magnetotransistors using HSPICE

Abstract

In this paper, we present simulation results of magnetic sensitivity for bipolar magnetotransistors using an equivalent circuit modeling approach. The magnetotransistors is suitably partitioned into inactive- and active-magnetic device regions where the latter is modeled using an appropriate circuit topology, based on magnetic field dependent resistors and voltage controlled current sources that account for the interaction of the magnetic field on the injected currents. The resulting equivalent circuit is generated and implemented into HSPICE and simulation results, and subsequent optimization, of magnetic sensitivity are obtained for various geometrical and technological parameters. The circuit approach presented here facilitates computer aided design (and optimization) of both sensor, the co-integrated circuitry, and their interactions, since it can all be done in the same environment. >