Abstract
In this paper, the causes of edge over erosion (EOE) in copper CMP are investigated. Wafer patterns containing square-wave features with pattern density of 50% and line width of 0.18μm, 0.5μm, 1μm and 2μm are studied. Under same polishing condition, the evolution processes of edge over erosion of the four different pattern structures are simulated by using frequency components algorithm (linear system method). The wafer profiles of the four pattern structures during polishing processes are given. It is seen that the values of EOE, erosion and dishing are different with different line width of the pattern. The results of the simulation of EOE, erosion and dishing are compared with the experimental data. Conclusions are given.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
