Abstract
Perpendicular spin-transfer torque (p-STT) magnetic memory is gaining increasing interest as a candidate for storage-class memory, embedded memory, and possible replacement of static/dynamic memory. All these applications require extended cycling endurance, which should be based on a solid understanding and accurate modeling of the endurance failure mechanisms in the p-STT device. This paper addresses cycling endurance of p-STT memory under pulsed electrical switching. We show that endurance is limited by the dielectric breakdown of the magnetic tunnel junction stack, and we model endurance lifetime by the physical mechanisms leading to dielectric breakdown. The model predicts STT endurance as a function of applied voltage, pulsewidth, pulse polarity, and delay time between applied pulses. The dependence of the endurance on sample area is finally discussed.
Highlights
M AGNETORESISTIVE random access memory (MRAM) is one of the most promising memory technology due to its fast switching, nonvolatile states, high endurance, CMOS compatibility, and low current operation [1]
The state-of-the-art conceptual implementation of MRAM relies on the magnetic tunnel junction (MTJ), namely a metal–insulator–metal stack consisting of a MgO dielectric barrier between two CoFeB ferromagnetic electrodes
We show a comprehensive study of breakdown-limited cycling endurance in Perpendicular spin-transfer torque (p-spintransfer torque (STT))-MRAM devices
Summary
M AGNETORESISTIVE random access memory (MRAM) is one of the most promising memory technology due to its fast switching, nonvolatile states, high endurance, CMOS compatibility, and low current operation [1]. Thanks to these characteristics, MRAM is under intense consideration for applications as storageclass memory (SCM) [2]–[5] and embedded nonvolatile. The state-of-the-art conceptual implementation of MRAM relies on the magnetic tunnel junction (MTJ), namely a metal–insulator–metal stack consisting of a MgO dielectric barrier (tMgO ≈ 1 nm) between two CoFeB ferromagnetic electrodes. We provide a fully detailed report, with a deeper investigation of the fundamental mechanisms of defect generation/activation, a direct evidence for polarity-dependent activation, and a study of areadependent endurance
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