Abstract
The effect of interdiffusion on some important optical properties of semiconductor distributed Bragg reflectors (DBRs) has been successfully modeled by simple analytical expressions. An analytical expression for the coupling coefficient κ was derived as a function of diffusion length. This expression allows the reflectivity, stop bandwidth, and penetration depth to be modeled for diffused DBR structures. A 19-period GaAs/AlAs DBR centered at 950nm was used to test and validate the model. It has been shown that the obtained results agree very will with those reported earlier using the transfer matrix method. As so, the model may provide a simple, versatile, and rapid technique for the analysis of diffused DBRs composed of any material system.
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