Abstract
This work shows the modeling process of computing coupling coefficients of first-order distributed feedback (DFB) metal-semiconductor quantum-well lasers. InGaAsP/InP/metal lasers with wavelength 1300 nm and GaAs/AlGaAs/metal lasers with wavelength 850 nm are discussed and compared. The optical waveguide structure for such a laser has semiconductor layers and a built-in metal grating layer. The interface between the metal layer and its neighboring semiconductor layer has sinusoidal corrugation geometry. To compute the coupling coefficient of the metalgrating waveguide, a model is constructed by Floquet-Bloch formalism (FB). Ray optics technique (RO) is also used to calculate the coupling coefficients. These two methods have close results.
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