Abstract
A design issue, dependent on mechanical and geometrical parameters, is described related to silicon micro-mechanical structures. A piezoresistive pressure sensor fabricated by deeply anisotropic etching from a silicon substrate is modeled and analyzed by involving the rim boundary effect, caused by a gently tapered shape around a thin diaphragm, and large deflection effect, causing a nonlinear response to a load. Experimental results indicate that the calculated values agree very well with measured ones. A doubly-supported beam having residual stress due to deep boron diffusion is also modeled, allowing a set of elastic coefficients different from that for an undoped silicon to be derived. Sensitivity in capacitive sensors based on the doubly-supported beam structures is indicated as being considerably largely decreased due to the residual stress. The calculated sensitivity agrees fairly well with measured one.
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