Modeling and simulating the nerve axon as a thin-film microstrip

Abstract

Since Hodgkin and Huxley described the nerve axon as a cable (H–H model), many efforts have been made to find more approximated transmission line models representing the nerve axon. This paper describes a simple model that represents the nerve axon in two parts: the internodal space as a lossy thin-film microstrip line and the node of Ranvier as an active complex load. The complex load terminating the transmission line is given by the variable impedance of a tunnel diode. First, the internodal space is circuitally analyzed and electromagnetically simulated as a lossy thin-film microstrip line terminated on a complex fixed load. The transmission line circuit theory, the two-port network analysis, and a two-dimensional finite difference time domain method are used for such a task by forcing a strip subatomic metallization. Then, the transfer function of the internodal space, cascaded with the node of Ranvier, is equated to the transfer function of a transmission line section that includes a tunnel diode. This procedure is carried out in order to obtain the diode's variable impedance. The diode was introduced by Nagumo, Arimoto, and Yoshizawa for simulating the nerve axon as an active transmission line. The active transmission line is represented by the FitzHugh simplified H–H model known as the Bonhoeffer–van der Pol model.