Abstract
Physical models are developed to investigate the following conditions relevant to discharge-produced plasma (DPP) devices under development for extreme ultraviolet (EUV) lithography: gaseous jet propagation in the chamber, removal of neutral particles with a gaseous jet, and deviation of charged particles with a magnetic field. Several geometries of the mitigation systems are considered for removing debris during the EUV lithographic process. The design of a mitigation system is proposed and simulated with the computer models. The behavior of Xe, Li, and Sn debris in Ar and He jets is simulated by using the high energy interaction with general heterogeneous target systems (HEIGHTS) integrated package. Final energy and local distributions are calculated using experimental debris data from current EUV facilities.
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