Abstract
This paper presents the analysis, modeling, and measurements of a novel configuration of spiral inductors and transformers to enhance the figure of merits. The present configuration utilizes a Z-shaped multilayer metalization to increase the Q of the monolithic inductors, and increase K without sacrificing the Q of the monolithic transformers. A simple two-port lumped-circuit model derived from inductor S-parameters is used to illustrate the potential of the new design. Several on-chip transformers have been fabricated using the Motorola 0.18-micron copper process. The experimental data shows good agreement with predicted data obtained using the HFSS software simulator. A noticeable increase of mutual coupling and Q is achieved. The transformer can be optimized to achieve high Q or high K or both. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.
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