Abstract
This work investigates vital characteristics of tin doped group IV based quantum well for its potential as an electroabsorption modulator (EAM). Absorption coefficient and refractive index variation in proposed EAM structure are evaluated and studied under variation of electric field. Performance parameters like extinction ratio, chirp factor, etc. are calculated for different electric fields and Sn content of GeSn quantum well. A significant negative chirp and high extinction ratio has been obtained at midinfrared range of wavelength. The result reveals that appropriate selection of external field and Sn content plays a decisive role in the performance of QWEAM. Moreover, there is a tradeoff between extinction ratio and insertion loss on increasing length of the modulator.
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