Abstract
Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.
Highlights
In the last decade, Ion Sensitive Field Effect Transistors (ISFETs), originally introduced by Bergveld [1], have been under extensive study because of rapid response, small size, as well as applicability of semiconductor and clear operation principle based on site binding theory [2] [3]
The study of noise in ISFETs is important for the reason that any source of noise present in the sensor imposes a fundamental limit to the accuracy of measurements and, the sensitivity of ISFETs is limited by the noise sensor
In several works [5] [10] [11], it is believed that the presences of 1/f low-frequency noise in ISFET sensors are mostly contributed by the FET structure of the device, which is dominated by the Insulator-Semiconductor interface [12]
Summary
Ion Sensitive Field Effect Transistors (ISFETs), originally introduced by Bergveld [1], have been under extensive study because of rapid response, small size, as well as applicability of semiconductor and clear operation principle based on site binding theory [2] [3]. Numerous studies on different sources of ISFET noise were reported [4] [5] and thereafter an important development has already been made. (2014) Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors. In several works [5] [10] [11], it is believed that the presences of 1/f low-frequency noise in ISFET sensors are mostly contributed by the FET structure of the device, which is dominated by the Insulator-Semiconductor interface [12]. We used a MATLAB program to prove that many parameters can affect the 1/f noise in ISFET devices as well as the pH solution. Additional, the modeling of temperature contribution in the spectacle density of 1/f noise in ISFET and afterward are investigated in our present work
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