Abstract
A theory is presented to describe adsorption on surfaces with impurities. It is based on embedding a cluster of auxillary basis function into an indented Sommerfeld metal. The cluster of auxiliary functions is chosen in such a way that the boundary conditions for the impurities are satisfied. The method is applied to calculate the interaction of a helium a atom with a stepped Cu(110) surface. The interaction with the d-electrons is included as well. The charge density for the stepped surface exhibits oscillations near the step and a pronounced Smoluchowsky effect. Compared to the flat surface case the helium binding energy is increased right at the step and decreases further out on the low terrace.
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