Abstract
ABSTRACT The interface has a crucial influence on the dielectric properties of thin films. A model, including the film thickness and the interfacial layer thickness, for dielectric nonlinearity of ferroelectric films was established. The ferroelectric film and transition layers are modeled by capacitances and resistances, and the Schottky barriers at metal/dielectric interfaces are modeled in terms of diode equivalent circuits. It is found that the increasing tendencies of the remanent polarization, dielectric constant and tunability from model are consistent with those from experiment. The results proved that the above model can describe the interface effect on dielectric nonlinearity of ferroelectric films.
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