Abstract
Copper barrier effectiveness of ultra-thin 100 /spl Aring/ MOCVD titanium nitride (TiN) and silane treated titanium nitride (TiN:Si) films was investigated and compared to the industry standard 150 /spl Aring/ PVD Ta barrier. The metallurgical stability of the film and barrier failure was determined by sheet resistance change, optical and electron microscopy after Secco etch and C-V measurements. Copper drift through the barrier was tested under bias temperature stress conditions (200/spl deg/C and 2 MV/cm) using leakage current vs. time measurement on MOS capacitors.
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