Abstract
InNAs/GaAs multiple-quantum-well samples were grown by MOCVD on (100) n+-GaAs substrates at 500 °C and 60 Torr using uncracked dimethylhydrazine (DMHy). Quantum well layers were grown using trimethylindium, tertiarybutylarsine, and 95–97.5% of DMHy in the vapor phase, while GaAs buffer, barrier, and cap layers were grown using trimethylgallium and arsine. The crystalline quality and solid phase composition were evaluated using high-resolution X-ray diffraction analysis. The nitrogen content in InNAs wells was determined to be 18%. Surface morphology was investigated by atomic force microscopy (AFM) and field emission microscopy (FEM). Photoluminescence measurements confirm that the bandgap energy of InNAs is significantly lower than that of InAs. The peak emission wavelength of ∼6.5 μm at 10 K is the longest reported so far for dilute nitride semiconductors.
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