Abstract
ABSTRACTInNAs/GaAs multiple-quantum-wells were grown by MOCVD on (100) SI-GaAs substrates using trimethylindium, tertiarybutylarsine, and 95–97.5% of dimethylhydrazine (DMHy) in the vapor phase. The crystalline quality and solid phase composition were evaluated using highresolution x-ray diffraction analysis. Nitrogen content in InNAs wells was determined to be 28%. Electron energy loss spectroscopy was used to confirm the presence of nitrogen in quantum wells. Surface morphology was investigated by atomic force microscopy (AFM) and field emission microscopy (FEM).
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