Abstract
The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire (QWR) is theoretically investigated under Born approximation. We calculate the screened mobility due to clusters (high indium composition InGaN) scattering in the InxGa1−xN QWR structure. The characteristics of the cluster scattering mechanism are discussed in terms of the indium composition of clusters, the one-dimensional electron gas (1DEG) concentration, and the radius of QWR. We find that the density, breadth of cluster, and the correlation length have a strong effect on the electron mobility due to cluster scattering. Finally, a comparison of the cluster scattering is made with the alloy-disorder scattering. It is found that the cluster scattering acts as a significant scattering event to impact the resultant electron mobility in ternary alloy QWR.
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