Mobility Enhancement in Graphene by insitu Reduction of Random Strain Fluctuations.

Abstract

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be insitu reduced by increasing the average uniaxial strain. When ∼0.2% of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by ∼35% is observed while the residual doping reduces by ∼39%. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.