Abstract
The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n) relation. These are addressed here through a transport study of BaSnO3(001) films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.
Highlights
BSO films is illustrated in Figs. 1(a)–1(c), where 300 K ρ, n, and μ are plotted vs. T red
This onset temperature for conduction is roughly consistent with a recent report where La-doped BSO films were shown to have O2-pressure-sensitive transport properties above ∼500 ◦C.34
The equivalent for SrTiO3 lies at ∼2 eV,[7] highlighting the efficacy of V O doping in BaSnO3
Summary
BSO films is illustrated in Figs. 1(a)–1(c), where 300 K ρ, n, and μ are plotted vs. T red. Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3
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