Abstract
Misfit dislocations in In1−xGaxAs/InP single heterostructures grown by molecular beam epitaxy were studied by X-ray topography, cathodoluminescence and chemical etching. It was found that they are parallel to the 〈110〉 directions lying on the (001) growth plane, that they are 60° type with Burgers vector at 45° to the (001) plane and that they are driven by the misfit stress into the InP substrate up to a depth of a few μm. The growth conditions, i.e. the layer thickness and lattice mismatch, under which misfit dislocation-free heterostructures can be obtained were determined. Finally, the correlation between cross hatch patterns on the epilayer surface and misfit dislocations was studied.
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