Abstract
Misfit dislocation generation in SiGe/Si(001) heterostructures supersaturated with the vacancies (LT epitaxial growth) or self-interstitials (ion implantation) was studied by transmission electron microscopy. A model of “optimal” intrinsic point defects (IPDs) for effective strain relaxation is suggested and verified. Supersaturation of compressed SiGe layers with the vacancies (“optimal” IPDs) promotes high strain relaxation, whereas supersaturation with the self-interstitials (“inverse” IPDs) promotes a generation of V-shaped TDs which cannot extend to form MDs.
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