Abstract

The dynamics of transient transport of minority electrons injected into p+ doped submicron layers of GaAs and InP has been investigated using ensemble Monte Carlo method. It is found that the transit times of electrons across these layers are longer or shorter depending on the electric field strength and the width of the layers. For example the transit times across a 0.4 μm p + doped GaAs layers increases from 1.0 to 2.0 ps at 10 kV/cm electric field, while it decreases from about 3.0 to 2.0 ps at 50 kV/cm when the inelastic scattering of minority electrons by the hole plasma is taken into account. The calculations were also performed for InP and the results show the same trend.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.