Abstract
Detailed studies of the current-voltage characteristics of the STM tunnel junction with H-passivated Si(111) surfaces have been performed as a function of type and level of doping, temperature and light illumination of the surface. For slightly doped p-Si crystals we have observed a main contribution of minority carriers in the reverse tunnel current. For n-Si surfaces an abrupt increase of the reverse current at some bias voltage has been found. This effect is explained by a hole accumulation near the surface which changes band bending and initiates the hot-electron injection from the STM tip with the energy sufficient for the impact ionization of the carriers in the silicon. The hole accumulation also causes a vast hysteresis of the tunnel current. It creates a new look at the point tunnel contact as a low-dimensional bistable element.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
