Abstract
The minority-carrier lifetime in n-Al0.38Ga0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×1016 cm−3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.
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