Abstract
Abstract The minority carrier lifetime is measured in p -type Ge up to a majority carrier concentration of 10 19 cm −3 using the photoconductive effect and the photo-magneto-electric effect. A stronger than linear dependence of the reciprocal lifetime on the carrier density is observed. Therefrom, from the weak temperature-dependence, from previous work and from the comparison with Si-data, we conclude that the dominant recombination mechanism at high carrier concentrations is the phonon-assisted band to band Auger-recombination. A transition coefficient of about 10 −31 cm 6 sec −1 is estimated.
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