Abstract
Abstract The room-tempeterature neutron degradations of the minority carrier lifetimes in lithium-diffused and nonlithium-diffused n-type float-zone silicon are found to be comparable. The isochronal annealing of 90 per cent of the neutron damage in lithium-diffused material takes place between 300° and 380° K. The dominant contribution to this annealing is attributed to the diffusion of lithium in silicon.
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