Abstract
A novel thin-film technology for miniature hybrid microwave ICs is presented. All passive components, such as resistors and capacitors, are fully integrated on ordinary alumina ceramic substrates using the thin-film technology with very high yield. The numbers of parts and wiring processes were significantly reduced. This technology was applied to the fabrication of Ku-band solid-state power amplifiers. This thin-film technology offers the following advantages: (1) a very high yield fabrication process for thin-film capacitors having excellent electrical characteristics in the gigahertz range ( epsilon =3.6, Q=230 at 12 GHz) and reliability; (2) two kinds of thin-film resistors having different temperature coefficients of resistivity (TCRs) and a lift-off process to integrate them with thin-film capacitors; and (3) a matching method using the thin-film capacitor. >
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