MILLIMETER WAVE DETECTORS DEVELOPED ON THE BASIS OF DOPED SEMICONDUCTORS

Abstract

Semiconductor p-i-n structure with long i-base region doped with shallow donors/acceptors can be successfully used and have significant advantages in millimeter wave range as cooling THz receivers. It is shown that such detectors working in double current injection mode can have high current photosensitivity and detectivity, linear dependencies of sensitivity versus wavelength and applied voltage. Simulation results can be successfully used for detectors fabricated on the basis of several semiconductors: Si : Li , Si : O , Ge : B , Ge : Al , Ge : Ti , Ge : Be , Ge : P , Ge : As , Ge : Sb , GaAs : Li , GaAs : Zn , GaAs : Cd , GaAs : X , GaP : N , which covered wavelengths 40–200 μm. The simulation results made in this paper have demonstrated the ability of double injection structures to perform as practical and sensitive power detectors for THz radiation.