Abstract
The state-of-the-art low noise and high power microwave transistors of both bipolar and field effect types are reviewed. The analyses are made to determine the future potentials of bipolar and field effect transistors in microwave applications. It appears that the bipolar transistor is approaching old age both as low noise and high power devices, but field effect transistors show increasing promise in both applications. The trend for monolithic integration of maturing bipolar devices is also discussed.
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