Abstract
ABSTRACTWe examine the microwave reflection from the high mobility GaAs/AlGaAs two-dimensional electron system (2DES). Strong correlations have been observed between the microwave induced magnetoresistance oscillations and the microwave reflection oscillations in a concurrent measurement of the microwave illuminated magnetoresistance and the microwave reflection from the 2DES. The correlations were followed as a function of the microwave frequency and the microwave power dependent. Different existing theories are considered to explain the results.
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