Abstract

The results of a theoretical calculation of the resonant magnetizing field values for ferromagnetic resonance in thin films of nickel, iron and cobalt for frequencies of 3, 10, 30 GHz for various orientations of this field are presented. Analytical dependences of the ferromagnetic line shifts on the electric field strength are obtained for two- layer magnetoelectric composites in which PZT, PMN-PT or PZN-PT disks are used as piezoelectrics on which thin films of Ni, Fe or Co are deposited.

Highlights

  • In connection with the development of spintronics, interest in the magnetoelectric (ME) effect in nanostructures has increased

  • It is of interest to study the magnetoelectric effect in the ferromagnetic resonance (FMR) region in nanostructures based on ferromagnetic metals [2]

  • This paper presents the results of studies of the features of FMR in thin films of nickel, iron, and cobalt

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Summary

Introduction

In connection with the development of spintronics, interest in the magnetoelectric (ME) effect in nanostructures has increased. It is of interest to study the magnetoelectric effect in the ferromagnetic resonance (FMR) region in nanostructures based on ferromagnetic metals [2]. The main attention is paid to the theoretical study of the FMR line shift in two-layer ME composites based on thin films of ferromagnetic metals under the influence of an electric field. 1.1 Calculation methods of the FMR line shift in two-layer magnetoelectric composites. Cases were considered when the magnetizing field is perpendicular to the plane of a thin metal film, and directed in the. In case when a constant electric field directed perpendicular to the plane of the disk to influence at ME composites, the FMR line shifts as a result of the microwave ME effect [3]. The use of layered structures based on nanofilms of ferromagnetic metals will allow to proceed to further miniaturization of devices and design a number of new nanoelectronic microwave devices [4]

FMR in a ferromagnetic metal nanofilm
FMR line shift under an applied electric field
Conclusion
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