Abstract
The experimental results of microwave FMR studies on ultrathin Fe/GaAs layer structures with various thicknesses of Fe films and GaAs substrates using flip-chip arrangement are reported. First, the major technical aspects of the MBE-grown Fe/GaAs layer structures are summarized. The measured results on the FMR absorption levels versus the thicknesses of the Fe films and the GaAs substrates are then presented. The optimum sample preparation conditions and the thicknesses of Fe film and GaAs substrate for enhancement of the FMR absorption levels in the Fe/GaAs-based bandstop filters are also suggested.
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