Abstract
Mg2−xCuxSiO4 (0 ≤ x ≤ 0.2) ceramics were fabricated by the traditional solid-state process. The results revealed that solid solution was formed at x ≤ 0.2 by substitution Cu2+ for Mg2+ and the sintering temperature was lowered from 1500 to 1200 °C. LiF-doped (1 − y)Mg1.9Cu0.1SiO4–y(La0.5Na0.5)TiO3 (0.1 ≤ y ≤ 0.4) composite ceramics were obtained at a temperature range from 890 to 1000 °C. As increasing (La0.5Na0.5)TiO3 content y, the τf values showed a continuous positive increase. The 0.8Mg1.9Cu0.1SiO4–0.2(La0.5Na0.5)TiO3 composite ceramics with 4.0 wt% LiF sintered at 950 °C possess excellent microwave dielectric properties of εr = 13.3, Q × f = 14,400 GHz, and τf = 6 ppm/°C.
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