Abstract
ABSTRACT Polycrystalline (Pb,La)(Zr,Ti)O3 (PLZT) films were deposited on MgO (001) single crystal substrates using chemical solution deposition method. Structural properties of PLZT films were investigated using X-ray diffractometer. The dielectric properties of PLZT films were investigated under the dc bias field of 0−40 V using interdigital capacitors (IDC) device fabricated by photolithography and etching process. The small signal dielectric properties of PLZT films were calculated by modified conformal mapping the reflection scattering coefficient data measured using an HP 8510C vector network analyzer in 1–20 GHz at room temperature. The IDC device based on polycrystalline PLZT film exhibited about 40% and 8 of capacitance tunability with dc bias variation of 40 V and dielectric quality factor with no dc bias, respectively.
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