Abstract
We report on single-mode C-band distributed feedback lasers fabricated through micro-transfer-printing of semiconductor optical amplifier coupons fabricated on a InP source wafer onto a silicon-on-insulator photonic circuit. The coupons are micro-transfer printed on quarter-wave shifted gratings defined in SiN deposited on the silicon waveguide. Alignment-tolerant adiabatic tapers are used to efficiently couple light from the hybrid III-V/Si waveguide to the Si waveguide circuit. 80 mA threshold current and a maximum single-sided waveguide-coupled output power above 6.9 mW is obtained at 20 °C. Single mode operation around 1558 nm with > 33 dB side mode suppression ratio is demonstrated. Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow.
Highlights
Photonic integrated circuits (PICs) are currently being utilized mostly in telecom and datacom markets [1]
We integrate distributed feedback (DFB) lasers on silicon photonic integrated circuits containing quarter-wave shifted gratings based on the micro-transfer-printing of III-V semiconductor optical amplifiers (SOAs) coupons fully processed on an InP source wafer
The design schematic and the longitudinal cross section are illustrated in Fig. 1.One of the major issues when micro-transfer-printing a processed SOA is the stringent alignment requirement between III-V and Si waveguide required for efficient coupling of light from the III-V to Si waveguide
Summary
Photonic integrated circuits (PICs) are currently being utilized mostly in telecom and datacom markets [1]. Several high-performance III-V-on-Si hybrid lasers with more than 10 mW output power and higher operating temperature of above 70 oC have been demonstrated with III-V die-to-wafer bonding [3,7] While this enables dense integration of efficient light sources and optical amplifiers, the SiPh back-end flow needs to be modified for the III-V integration [8,9,10]. This approach doesn’t allow dense integration of devices based on a different III-V epitaxial structure on the SiPh circuits, given the minimum die size of a few mm that can be handled and processed. We integrate distributed feedback (DFB) lasers on silicon photonic integrated circuits containing quarter-wave shifted gratings based on the micro-transfer-printing of III-V SOA coupons fully processed on an InP source wafer
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