Abstract
Helium is insoluble in most materials and forms “bubbles” when it is ion implanted into them. The microstructures of the cavities formed when Si is implanted with He and annealed are of interest for several basic materials science investigations: luminescence of porous structures, stabilities of atomic surfaces and H attachment to Si bonds on the internal cavity surfaces. Such cavities can allow new “surface-science”-type investigations to be conducted, such as the recent determination of the Si-H bond strength (2.5±0.2 eV). We have used cross-section TEM at 200 kV to characterize the cavities formed when (001) Si is implanted with l×1017 He/cm2, 30 keV, at room temperature and then annealed at 700 or 800 °C. The enhancement of internal surface area relative to the wafer surface is quantified, and faceting of the cavities is used to infer the relative stabilities of Si surfaces.
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