Abstract
The Aℓ/GaAs contact system is used in microwave field effect transistors, but to date, little systematic TEM characterization of the contact microstructure has been performed. There are three possible epitaxial configurations of Aℓ on GaAs [100].[100]Aℓ; Aℓ [100] ||GaAs[100], Aℓ [010] ||GaAs[011] [110]Aℓ; Aℓ [110] ||GaAs[100], Aℓ [110]||GaAs[011] [110]R Aℓ; Aℓ[110] ||GaAs[100], Aℓ [001] ||GaAs [011]The interfacial atomic structure of Aℓ[100] ||GaAs[100] has been investigated previously using a CBED technique on plan view specimens. this paper we study the distribution of the various Aℓ orientations as a function of initial GaAs surface reconstruction and film thickness. The misfit dislocation structure of [100] Aℓ/[100] GaAs has been characterized by weak beam microscopy. Also, lattice images from cross-sectional samples are presented. The samples studied were MBE grown and subsequent electrical characterization showed them all to have Schottky barrier heights (SBH) of 0.77eV and excellent rectifying properties over a large temperature range.
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